【摘要】 随着集成电路特征尺寸的不断缩短,利用先进的高k/金属栅堆叠来取代传统的SiO2/多晶硅栅结构成为微电子技术发展的必然,确保这些新的栅极堆叠类型具有足够的可靠性是非常重要的。综述了高k栅介质可靠性的研究现状,阐明了瞬态充电效应导致的阈值电压不可靠问题,对偏压温度不稳定现象(BTI)和高k击穿特性进行了探讨。更多还原

【Abstract】 With the scalability of the feature size of ICs,using advanced high-k/metal gate stack to replace traditional poly-Si/SiO2 gate structure becomes inevitable,it is very important to guarantee sufficient reliability for these new types of gate stacks.The status of reliability studies of high-k gate dielectrics are reviewed,the problems of threshold voltage instability caused by transient charging effects are illustrated.Some insights in the mechanisms of bias temperature instability(BTI) and high-k breakdown are also discussed.更多还原