【摘要】 采用电子回旋共振-等离子体增强化学气相沉积(ECR-PECVD)技术,以氮气为等离子体气源,5%硅烷(Ar稀释)为前驱气体,在玻璃衬底上低温制备了氮化硅薄膜。利用偏振光椭圆率测量仪、原子力显微镜(AFM)等测试技术分析探讨了硅烷流量(5~50 cm3)、沉积温度(150~350℃)以及微波功率(500~650 W)等对SiN薄膜沉积速率及表面形貌的影响。结果表明:沉积速率随着硅烷流量和微波功率的增加而增加(最高达到11.07 nm/min),随着衬底温度的增加而降低,在温度为350℃时降低到2.44 nm/min。薄膜的粗糙度随着衬底温度和微波功率的增加而降低,粗糙度最低为0.89 nm,说明薄膜的表面质量较高。更多还原

【Abstract】 The silicon nitride films were deposited at low deposition temperature by electron cyclotron resonance-plasma enhanced chemical vapor deposition(ECR-PECVD) technique on glass substrate by applying pure nitrogen as the plasma gas source and 5% silane(Ar dilute) as the precursor gas.The deposition rate,refractive index and surface topography of SiN films were studied by ellipsometry and AFM.Results show that the deposition rate increases with the silicon gas flow and microwave power increasing,and decreases with the substrate temperature increasing.The maximal deposition rate is 11.07nm/min.The minimal deposition rate of 2.44nm/min is achieved at the substrate temperate of 350℃.With the deposition temperature and microwave power increasing,the roughness of silicon nitride films decreases with the minimal value is 0.89nm.更多还原