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Ferroelectric properties of sol-gel derived Nd-doped SrBi4Ti4O15 thin films

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【作者】 范素华； 张丰庆； 王培吉； 任艳霞；

【Author】 FAN Suhua 1, ZHANG Fengqing 1, WANG Peiji2, REN Yanxia3 (1. Department of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China;2. Department of Science, University of Jinan, Jinan 250022, China; 3. Jiyuan Vocational and Technical College, Jiyuan 454650, China)

【机构】 Department of Materials Science and Engineering, Shandong Jianzhu University； Department of Science, University of Jinan； Jiyuan Vocational and Technical College；

【摘要】 Neodymium-doped strontium bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric properties of SrBi4–xNdxTi4O15 thin films were systematically studied. The results indicated that the SrBi3.88Nd0.12Ti4O15 (SBNT0.12) thin films had better ferroelectric properties, with a remanent polarization of (2Pr) of 34.3 μC/cm2 and a coercive field (2Ec) of 220 kV/cm. This could be attributed to the fact that SBNT0.12 ferroelectric thin films consisted of more and larger ball-like grains, approximately 150–200 nm, with structure distortion, which greatly contributed to the improvement of the ferroelectric properties of the films. Furthermore, the film exhibited a good fatigue resistant property. The value of 2Pr after 1010 switching cycles did not change significantly. The SrBi3.88Nd0.12Ti4O15 films were promising candidates for the application of FeRAMs.

【Abstract】 Neodymium-doped strontium bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric properties of SrBi4–xNdxTi4O15 thin films were systematically studied. The results indicated that the SrBi3.88Nd0.12Ti4O15 (SBNT0.12) thin films had better ferroelectric properties, with a remanent polarization of (2Pr) of 34.3 μC/cm2 and a coercive field (2Ec) of 220 kV/cm. This could be attributed to the fact that SBNT0.12 ferroelectric thin films consisted of more and larger ball-like grains, approximately 150–200 nm, with structure distortion, which greatly contributed to the improvement of the ferroelectric properties of the films. Furthermore, the film exhibited a good fatigue resistant property. The value of 2Pr after 1010 switching cycles did not change significantly. The SrBi3.88Nd0.12Ti4O15 films were promising candidates for the application of FeRAMs.

【关键词】 SrBi4Ti4O15 thin films； sol-gel method； ferroelectric properties； rare earths；
【Key words】 SrBi4Ti4O15 thin films； sol-gel method； ferroelectric properties； rare earths；
【基金】 the National Natural Science Foundation of China (60471042);the Natural Science Foundation of Shandong Province (Y2007F36)
  • 【文献出处】 Journal of Rare Earths ,稀土学报(英文版) , 编辑部邮箱 ,2008年04期
  • 【分类号】TB383.2
  • 【被引频次】6
  • 【下载频次】24
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