【摘要】 使用N2和N2/NH3混合气氛作为快速热退火(RTA)气氛,研究了RTA气氛对洁净区、氧沉淀和硅片表面形貌的影响。在N2/NH3混合气氛下,RTA处理后,硅片表面出现小坑,同时,微粗糙度增加,后续热处理工艺中会出现薄的洁净区(~10μm)和高密度的氧沉淀。经过N2气氛RTA处理的硅片,表面微粗糙度变化不大,后续热处理中获得较厚的洁净区(≥40μm)和较低的氧沉淀密度。更多还原

【Abstract】 Using N2 and N2/NH3 mixture gas as RTA ambient separately,effects of RTA ambient on distribution of oxygen precipitates and surface morphology were studied.After RTA and following two-step annealing processes,a high density of oxygen precipitates and a thin denuded zone(~10 μm) were obtained in wafers treated in N2/NH3 ambient,while a relatively low density of oxygen precipitates and a thick denuded zone(≥40 μm) were observed in N2 ambient.The wafer surface micro-roughness increased drastically and many small pits appeared after N2/NH3 ambient RTA treatment.In contrast,the roughness of wafers in N2 ambient increased only a little.更多还原