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Au/p-CdZnTe欧姆接触的电学测量及界面特性分析
Electrical measurement and interface analysis of the ohmic contact on p-CdZnTe with electroless Au
【摘要】 采用化学镀金法在高阻p-CZT(CdZnTe)晶片表面制备Au电极,并用改进的圆环传输线模型(Ring-CTLM)测量了CZT电极的接触电阻,探讨了大气气氛下退火温度对CZT电极欧姆特性的影响。实验结果表明,200℃退火可以显著改善欧姆特性,使接触电阻率cρ显著减小,采用Ring-CTLM模型测得CZT与金电极接触电阻率为0.1524Ω.cm2。通过XPS分析了CZT与Au电极接触界面的成分,发现在Au/p-CdZnTe界面处形成了CdTeO3层,该界面层可起到载流子复合中心的作用,构建的新模型很好地解释了化学镀金法在p-CdZnTe晶片表面形成欧姆接触的机理。
【Abstract】 Au ohmic electrodes were prepared by the reaction of gold chloride solution on p-CdZnTe surface,and the Ring-CTLM(ring circular transmission line model method) graph was gained by photolithography.The ohmic contact resistivities(ρc) of Au/p-CdZnTe contacts after annealing at different temperature were characterized by I-V measurement.ρc of contact after annealing at 200℃ was improved to be 0.1524Ω·cm2.From XPS analysis,CdTeO3 interface layer was found.This interface layer could act as the charge carrier recombination center,which can explain the ohmic contact mechanism of Au/p-CdZnTe.
【Key words】 CdZnTe wafer; electroless Au contact; measurement of ohmic contact resistivity; CdTeO3 interface;
- 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2008年06期
- 【分类号】TN304
- 【被引频次】1
- 【下载频次】210