Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film

【摘要】 <正> An investigation was made into the nitrogen-trimethylgallium mixed electron cy-clotron resonance （ECR） plasma by optical emission spectroscopy （OES）.The ECR plasma en-hanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on anα-Al₂O₃ substratc.X-ray diffraction （XRD） analyses showed that the peak of GaN （0002） was at2θ= 34.48°,being sharper and more intense with the increase in the N₂:trimethylgallium（TMG）flow ratio.The results demonstrate that the electron cyclotron resonance-plasma enchanced met-alorganic chemical vapor deposition （ECR-MOPECVD） technology is evidently advantageous forthe deposition of GaN film at a low growth temperature.更多还原

【Abstract】 An investigation was made into the nitrogen-trimethylgallium mixed electron cy- clotron resonance （ECR） plasma by optical emission spectroscopy （OES）.The ECR plasma en- hanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on an α-Al₂O₃ substratc.X-ray diffraction （XRD） analyses showed that the peak of GaN （0002） was at 2θ= 34.48°,being sharper and more intense with the increase in the N₂:trimethylgallium（TMG） flow ratio.The results demonstrate that the electron cyclotron resonance-plasma enchanced met- alorganic chemical vapor deposition （ECR-MOPECVD） technology is evidently advantageous for the deposition of GaN film at a low growth temperature.更多还原