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200nm栅长In0.52Al0.48As/In0.6Ga0.4As MHEMTs器件（英文）

200nm Gate Length Metamorphic In0.52Al0.48As/In0.6Ga0.4 As HEMTs on GaAs Substrates with 110GHz fT

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【作者】 黎明； 张海英； 徐静波； 付晓君；

【Author】 Li Ming,Zhang Haiying,Xu Jingbo,and Fu Xiaojun(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

【机构】 中国科学院微电子研究所；

【摘要】 利用电子束光刻技术制备出200nm栅长GaAs基InAIAs/InGaAs MHEMT器件.Ti/Pt/Au蒸发作为栅极金属.同时为了减少栅寄生电容和寄生电阻,采用3层胶工艺,实现了T型栅.GaAs基MHEMT器件获得了优越的直流和高频性能,跨导、饱和漏电流密度、域值电压、电流增益截止频率和最大振荡频率分别达到510mS/mm,605mA/mm,-1.8V,110GHz及72GHz,为进一步研究高性能GaAs基MHEMT器件奠定了基础.

【Abstract】 200nm gate-length GaAs-based InAlAs/InGaAs MHEMTs are fabricated by MBE epitaxial material and EBL(electron beam lithography)technology.Ti/Pt/Au is evaporated to form gate metals.A T-shaped gate is produced using a novel PMMA/PMGI/PMMA trilayer resist structure to decrease parasitic capacitance and parasitic resistance of the gate.Excellent DC and RF performances are obtained and the transconductance(gm),maximum saturation drain current density(JDSS),threshold voltage(VT),current cut-off frequency(fT),and maximum oscillation frequency(fmax)of InAlAs/InGaAs MHEMTs are 510mS/mm,605mA/mm,-1.8V,110GHz,and 72GHz,respectively.

【关键词】 MHEMT； InAIAs/InGaAs； 电子束光刻； T型栅；
【Key words】 MHEMT； InAlAs/InGaAs； electron beam lithography； T-shaped gate；
【基金】 the State Key Development Program for Basic Research of China(No.G2002CB311901);the Equipment Investigation Program in Advance(No.61501050401C);the Dean Fund of the Institute of Microelectronics,Chinese Academy of Sciences(No.O6SB124004)~~
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2008年09期
  • 【分类号】TN386
  • 【被引频次】1
  • 【下载频次】47
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