【摘要】 对用于光电集成(OEIC)的InP基异质结双极性晶体管(HBT)进行了分析,提出了一种新的集电区外延结构,该结构在集电极区和次集电区之间插入一层特定厚度的p-InGaAs和两层特定厚度但不同掺杂浓度的n-InP层,从仿真结果出发对各种不同结构做出分析,发现这种新结构克服了双异质结双极晶体管的电流阻挡效应,同时很好地解决了传统的双HBT(DHBT)的电子堆积效应和SHBT反向击穿电压低的问题。更多还原

【Abstract】 InP based HBT used for OEIC(optoelectronic integrated circuits)was analyzed,and a novel collector layer structure was proposed,which was achieved by introducing p-InGaAs layer and two n-InP layers with specific thickness and doping level between the collector and the subcollector.The novel structure overcomes the electron blocking effect in DHBT and solves the traditional problem of reversed breakdown voltage in SHBT.The composite collector structure is suitable for integrated p-i-n photodetector.更多还原