【摘要】 采用传输矩阵法对多量子阱结构导带子能级位置进行理论计算,确定其量子阱宽度、势垒高度等物理参数。用MBE设备进行GaAs/AlGaAs多量子阱红外探测器结构材料的生长。利用傅里叶变换红外光谱仪对所制作的器件进行了光谱测量,不同外延材料的对比实验结果表明,器件的峰值响应波长与理论计算结果吻合较好;由传输矩阵法计算确定的多量子阱导带子能级位置而推算得到的响应波长与实际器件的响应波长有良好的一致性。更多还原

【Abstract】 A quantum mechanical model for simulation of electron transport in QWIPs was established with transfer matrix method(TMM),in order to indentify the parameters such as the well width,height of the barrier,etc.The GaAs/AlGaAs were grown on the semi-insulating GaAs substrate by molecular beam epitaxy(MBE).The device was measured by FTIR.The experiment results showed a good agreement with calculations.更多还原