【摘要】 以硅纳米孔柱阵列(Si-NPA)为衬底,通过采用真空蒸镀技术沉积金属锌,再在纯氧气氛中进行氧化退火的方法,制备出具有阵列特征的ZnO/Si-NPA异质结构材料。研究发现,ZnO/Si-NPA的表面形貌、结构和光致发光特性强烈依赖于氧化退火温度。当氧化退火温度低于400℃时,样品的发光主要来自于Si-NPA衬底;当氧化退火温度高于700℃时,样品的发光主要来自于ZnO薄膜;经过600℃氧化退火的样品则同时包含有来自于Si-NPA和ZnO薄膜的发光。上述结果表明,通过控制ZnO/Si-NPA制备过程中的氧化退火温度,可以在一定程度上实现对其光致发光谱的有效调控。这对未来制备具有特定功能的半导体光电器件具有重要的实际意义。更多还原

【Abstract】 Regularly arrayed zinc oxide/silicon nanoporous pillar array(ZnO/Si-NPA) heterostructure was prepared by evaporating zinc atoms on Si-NPA substrate followed by an annealing process in pure oxygen environment.It was found that the morphology,structure and photoluminescence(PL) of ZnO/Si-NPA highly depends upon the annealing temperature adopted in sample preparing process.When the annealing temperature is below 400 ℃ or above 700 ℃,the PL would be mainly attributed to the light emission from Si-NPA substrate or ZnO film,respectively.PL originating from both Si-NPA substrate and ZnO film is simultaneously observed in the sample prepared with an annealing temperature of 600 ℃.Our experimental results show that to a degree,the PL could be effectively controlled through changing the annealing temperature adopted in the preparing process.This might be of practical importance in fabricating optoelectronic devices.更多还原