【摘要】 MgO介质保护膜掺杂可以改变其性能,基于这一现象,本文利用电子束加热蒸镀法,在多种掺杂比和多种工艺条件下制备了MgO介质保护膜和宏单元气体放电屏。利用扫描电子显微镜(SEM)对制备的复合介质保护膜样品的进行了微观表征,并且,利用宏单元气体放电实验屏研究了介质保护膜的气体放电特性。结果表明:与纯MgO介质保护膜相比,掺杂Sc2O3的介质保护膜具有较好的性能。更多还原

【Abstract】 The influence of Sc2O3 doping and film growth conditions on MgO protective layers in AC plasma display panel(AC-PDP) was studied.Sc2O3-doped MgO films,grown by electron-beam evaporation under different growth conditions including variations in dopant concentrations,η,in substrate temperatures,T,and in evaporation rates,V,were characterized with scanning electron microscopy(SEM);and the discharge characteristics were studied with macro-cell screens.The results show that Sc2O3-doped MgO protective layers outperform pure MgO protective layers.更多还原