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利用正硅酸乙酯制备二氧化硅膜
Synthesis of silica film using tetraethylorthosilicate
【摘要】 以正硅酸乙酯为原料,利用微波等离子体化学气相沉积法在低温条件下在Si基片上制备了SiO2膜,着重研究了正硅酸乙酯注入位置对SiO2膜结构的影响.实验表明,在利用等离子体化学气相沉积法制备SiO2膜时,表面反应是低温条件下获得高质量膜的重要条件之一;同时射频偏压的使用有利于提高膜的致密度.
【Abstract】 Tetraethylorthosilicate(TEOS) was used as raw material,and silica films were synthesized through microwave plasma chemical vapor deposition at low temperature.The effects of the injection point and the radio frequency bias on the structure of the silica films were discussed.From the research results,it can be concluded that surface reactions is the prerequisite for the synthesis of high quality silica film.
【关键词】 二氧化硅膜;
正硅酸乙酯;
微波等离子体化学气相沉积法;
表面反应;
【Key words】 silica film; tetraethylorthosilicate; microwave plasma chemical vapor deposition; surface reaction;
【Key words】 silica film; tetraethylorthosilicate; microwave plasma chemical vapor deposition; surface reaction;
【基金】 国家自然科学基金资助项目(50572075)
- 【文献出处】 武汉工程大学学报 ,Journal of Wuhan Institute of Technology , 编辑部邮箱 ,2007年02期
- 【分类号】TN304.05
- 【被引频次】8
- 【下载频次】1228