【摘要】 提出并设计了一种可以完全单片集成的5.7 GHz低噪声放大器(LNA)。该电路结构利用MOSFET自身的栅寄生电阻,通过简单的LC网络变换实现输入匹配;并采用跨阻结构,实现输出匹配。该电路采用TSMC 0.35μm CMOS工艺,用ADS模拟软件进行分析与优化。结果表明,设计的低噪声放大器,其增益为11.34 dB,噪声系数为2.2 dB,功耗12 mW,输入反射系数-33dB,线性度-4 dBm。更多还原

【Abstract】 A 5.7 GHz fully integrated CMOS low noise amplifier(LNA) implemented with TSMC’s 0.35 μm standard CMOS technology is presented.The proposed LNA converts the parasitic input resistance of a MOSFET to 50 Ω by a simple LC network for input matching and the transimpedance structure is used for output matching.Simulation and analysis using ADS simulator show that the circuit has a gain of 11.34 dB,a noise figure of 2.2 dB,an input reflection of-33 dB,and an IIP3 of-4 dBm with 12 mW of power consumption.更多还原