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Photonic crystal vertical-cavity surface-emitting laser based on GaAs material

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【Author】 XU XingSheng, WANG ChunXia, SONG Qian, DU Wei, HU HaiYang, ZHAO ZhiMin, LU Lin, KAN Qiang & CHEN HongDa State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

【摘要】 A photonic crystal vertical-cavity-surface-emitting laser (PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 μm with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.

【Abstract】 A photonic crystal vertical-cavity-surface-emitting laser (PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 μm with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.

【关键词】 photonic crystal； vertical cavity surface emitting laser； single mode；
【Key words】 photonic crystal； vertical cavity surface emitting laser； single mode；
【基金】 Supported by the National Natural Science Foundation of China (Grant Nos. 60345008, 60377011 and 60537010)
  • 【文献出处】 Chinese Science Bulletin ,科学通报(英文版) , 编辑部邮箱 ,2007年18期
  • 【分类号】O734
  • 【下载频次】50
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