【摘要】 基于等离子体双极漂移模型,得到了超高速大功率半导体开关反向开关晶体管(RSD)的dI/dt耐量解析表达式,分析了RSD的主放电回路模型,在此基础上讨论了影响RSD的dI/dt特性的因素,dI/dt随预充电荷总量的增加、通过p基区的电子扩散时间和p基区电子寿命的缩短而增大,随主放电回路电压的上升和电感的减小而增大.RSD的dI/dt耐量可达1×105A.μs-1,远高于普通晶闸管,可应用于短脉冲大电流领域.更多还原

【Abstract】 The analytical expression for dI/dt capability of reversely switched dynistor(RSD) was found and the main discharge circuit model for RSD was analyzed by using plasma bipolar drift model.The factors influencing the dI/dt characteristics of RSD were discussed.It is found that the dI/dt increases as the total triggering electric amount increases and the electron diffusion time and lifetime in p-base decrease and it grows as the main circuit voltage increases and the inductance decreases.The validity of theoretical analysis was proved by experimental results.The RSD could be used in short pulse and great current areas because of its dI/dt capability would reach 1×105 A·μs-1,which is much higher than that of thyristor.更多还原