【摘要】 从微观理论对P型HgCdTe离子刻蚀成结的过程、机理进行了分析,提出HgCdTe环孔P-N结的汞原子扩散-补偿模型、P-N结的汞原子扩散-补偿-剩余施主杂质模型,提出并讨论了离子刻蚀技术形成环孔型P-N结和平面型P-N结的汞原子扩散激活能、扩散汞原子总量、扩散范围、扩散系数、有效汞原子系数等关键物理参数与工艺参数。更多还原

【Abstract】 In this dissertation,the process and mechanism of P-HgCdTe ion milling junction have already been analyzed based on micro-theory.Hg-atom diffusion-compensation model and diffusion-compensation residual donor impurities model of HgCdTe loophole P-N junction are presented.Some key physical and technological parameters(such as Hg-atom diffusion activation energy,the total amount of Hg-atom,range of diffusion,diffusion coefficient,effective Hg-atom coefficient and so on.) about loophole P-N junction and planar P-N junction formed by ion milling are presented and discussed.更多还原