【摘要】 将功率为75W、波长为1064nm的YAG激光的散焦束斑辐照在SiGe合金表面上能够形成多孔硅锗结构,其硅纳晶和锗纳晶的尺寸和形貌有自身的特点.用514nm激光激发,在600nm到900nm波长范围有较强的光致荧光.与化学刻蚀方式生成的多孔硅锗样品相比较,其荧光发光的频谱分布较复杂.当激光辐照到锗纳晶颗粒较多的地方,荧光发光谱分布延伸至红外区域.文中分析了发光的机理,检测出光致荧光的增强与氧化硅表面无关,主要来自硅纳晶和锗纳晶的表面态.指出了激光辐照方式加工样品的优点.更多还原

【Abstract】 A kind of porous structure was produced on SiGe film using laser with 75W power and 1064nm wavelength,and the porous structure can emit intense photoluminescence(PL).Under excitation of laser with 514nm wavelength,the range of the PL spectra is from 600nm to 900nm wavelength.And the rang extends to the infrared region when the excitation laser irradiates the Ge-rich partage of the sample.Some new models are found to explain the above phenomenon.更多还原