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Al-Mg-Si合金相界面的键特征与强化作用
Bond analysis of interface for strengthening in Al-Mg-Si alloy
【摘要】 对Al-Mg-Si合金中主要析出相β(Mg2Si)以及纯硅晶胞的键电子密度计算,结果表明硅晶胞中最强的Si-Si键nA比β(Mg2Si)相的Mg-Si最强键nA要强2倍,相应的最强键密度ρ也大2倍,这是影响Mg2Si颗粒的生长以及合金的硬度和强度等力学性能的重要原因.
【Abstract】 Through the calculation of the electronic bonding density of the main equilibrium phase β(Mg2Si)and pure Si cell,the results show that the strongest bond nA in Si cell is greater than that in Mg2Si cell in two times,and the ρ(electronic bonding density) in the Si cell is also greater two times than that in the Mg2Si cell.These are the main reason that influences the growth of grain of Mg2Si and the mechanical property of alloy such as hardness and intensity.
【关键词】 Al-Mg-Si合金;
Mg2Si;
原子成键;
力学性能;
【Key words】 Al-Mg-Si alloy; Mg2Si; atomic bonding; mechanical property;
【Key words】 Al-Mg-Si alloy; Mg2Si; atomic bonding; mechanical property;
【基金】 国家自然科学基金(50061001,50661001);广西科学基金(桂科自0007020,桂科基0342004-1,0639004)
- 【文献出处】 广西大学学报(自然科学版) ,Journal of Guangxi University(Natural Science Edition) , 编辑部邮箱 ,2007年01期
- 【分类号】TG111
- 【被引频次】6
- 【下载频次】153