【摘要】 X射线衍射谱和拉曼光谱均证实所用的SiC和GaN样品为不纯的非晶样品。通过新采取的减去经加权的“杂质”光谱的方法,从不纯的非晶样品的拉曼光谱中获取了纯非晶SiC和GaN的拉曼光谱,并由理论计算的声子态密度与减去“杂质”光谱的拉曼光谱很好相符,进一步证实减去“杂质”光谱的拉曼光谱确实是非晶拉曼光谱,从而表明新采用的扣除加权“杂质”光谱的方法是正确和具有广泛应用价值的。更多还原

【Abstract】 X-ray diffraction and Raman spectra show that the used amorphous SiC and GaN samples are impure. Adopting the new subtracting method with weighted impurity spectra, we obtained amorphous SiC and GaN Raman spectra involving only single component and structure. The good fitting between the calculated phonon density of states (PDOS) and the reduced Raman spectra confirms that the purified Raman spectra is really the amorphous Raman spectra, and the adopted spectral subtracting method with weighted impurity spectra is successful.更多还原