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用200kV高分辨电子显微镜辨认3C-SiC中的硅和碳原子

Distinguishing silicon and carbon atoms in 3C-SiC with a 200 kV high-resolution electron microscope

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【作者】 唐春艳李方华王蓉

【Author】 TANG Chun-yan~1,LI Fang-hua~(1*),WANG Rong~2(1.Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080;2.Department of Materials Physics and Chemistry,University of Science and Technology Beijing,Beijing 100083,China)

【机构】 北京凝聚态物理国家实验室中国科学院物理研究所北京科技大学材料物理系 北京100080北京100080北京100083

【摘要】 用200 kV六硼化镧灯丝的高分辨电子显微镜拍摄了外延生长在硅衬底的3C-SiC薄膜的[110]显微像。经过解卷处理和衍射振幅校正,把实验像转换为直接反映晶体投影结构的结构像,近邻Si、C原子柱显现为黑(灰)的像点对,即所谓的哑铃。测量了结构像中不同厚度区域哑铃的灰度变化,分析了哑铃中二个端点的相对灰度值随厚度的变化关系,结合赝弱相位物体近似像衬理论进行分析,辨认出Si与C原子柱。

【Abstract】 The image of 3C-SiC film grown on Si substrate was taken with a 200 kV high-resolution electron microscope equipped with the LaB6 filament.By performing the image deconvolution and diffraction amplitude correction the experimental image was transformed into the structure image that directly represents the projected crystal structure.The adjacent Si and C atomic columns reveal themselves as pairs of black/gray dots,i.e.the so called dumbbells.The gray levels of dumbbells in the structure image were measured for regions of different thickness,and the variation of relative gray level with crystal thickness for the two ends in dumbbells were obtained.Then the Si and C atomic columns can be distinguished by an analysis based on the contrast theory of pseudo weak-phase object approximation.

【基金】 国家自然科学基金资助项目(No.10474122)~~
  • 【文献出处】 电子显微学报 ,Journal of Chinese Electron Microscopy Society , 编辑部邮箱 ,2007年02期
  • 【分类号】O613.7
  • 【被引频次】1
  • 【下载频次】170
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