【摘要】 针对6kV/1000kW高压变频器中集成门极换流晶闸管I(ntegnated Gate Commutation Thyristor,简称IGCT)的串联缓冲电路进行了设计。在分析串联缓冲电路的同时,计算了吸收电容和吸收电阻的取值范围。而后,对缓冲电路进行了PSIM仿真和试验,通过仿真和试验波形的比较,验证了缓冲电路的工作效果。结果表明,吸收电容和吸收电阻的取值合适,能够对IGCT起到很好的保护。更多还原

【Abstract】 Integrated Gate Commutation Thyristor’s(IGCT) snubber circuit was designed for a 6kV/1000kW high-voltage inverter.RC-snubber circuit was selected and the value domain of capacity and resistance in this RC-snubber circuit was calculated.Then,the RC-snubber circuit was simulated by PSIM and experimented in laboratory.The efficiency of the RC-snubber circuit was compared between simulated and experimented waves.Results show that the RC-snubber circuit with the calculated value of capacity and resistance protects IGCT well.更多还原