【摘要】 提出了一种新型结构的静电感应器件,设计了一道环绕的深槽,用以切断寄生效应.静电感应器件的寄生效应会导致器件性能的劣化甚至失效,文中提出了寄生效应的模型,并用PSPICE进行了仿真模拟,数值模拟结果和实验结果一致.实验表明这种深槽结构能够有效截断寄生路径,消除寄生电流的影响,优化器件性能.同时,文章详细描述了这种器件的设计和制造工艺.更多还原

【Abstract】 A new structure is presented for designing and fabricating a static induction transistor(SIT).The transistor is designed to be surrounded by a deep groove to cut off the various probable parasitic effects that may degrade the device performance,especially the parallel-current effect.A mathematical model for the parasitic effect of SIT is proposed and simulated with PSPICE.The simulation results agree with the experiments.The novel structure is effective for avoiding the parallel-current effect.The etching technique of the groove is also investigated in depth in this paper.更多还原