【摘要】 利用磁控溅射方法在玻璃基片上制备了F eCoS iB薄膜,溅射过程中施加一横向静磁场,并在真空中退火。实验结果表明,F eCoS iB的应力阻抗效应与制备工艺(工作气压、溅射磁场)和退火条件(退火温度、退火时间)有着非常密切的联系。当偏置磁场从60 O e增加到120 O e时,薄膜的应力阻抗从0.5%提高到了1.65%。在80 O e磁场下,薄膜经300℃、40 m in退火处理后,应力阻抗效应达1.86%。更多还原

【Abstract】 FeCoSiB thin films were deposited on glass substrate by magnetron sputtering process during which a transverse mangnetostatic field was applied to with post-annealing in vacuum.The results showed that the stress-impedance effect of(FeCoSiB) films relates closely to such deposition process parameters as working gas pressure and magnetic filed for sputtering and such annealing conditions as annealing temperature time.When the intensity of bias field increases from 60 to 120Oe,the stress-impedance of films increases from 0.5% to 1.65%.The stress-impedance effect of films can be up to 1.86% in a 80Oe magnetic field when the films are annealed at 300℃ for 40 min.更多还原