【摘要】 采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2,Y2O3缓冲层。Ar/H2气氛下预沉积的引入,有效地抑制了基底的氧化。同时,为保证薄膜的外延取向,预沉积时间必须和总沉积时间满足线性关系。对比CeO2,Y2O3的生长条件,发现CeO2的外延生长区间比Y2O3宽,Y2O3的生长对温度、气压等条件更为敏感。最终制备的CeO2缓冲层是纯的(100)取向,其平面内Ф扫描半高宽(FWHM)为8.5°;而Y2O3存在两种平面取向,一种是Y2O3(110)‖Ni(100),另一种是Y2O3(100)‖Ni(100)。俄歇能谱观察表明,CeO2/Ni界面优于Y2O3/Ni界面。扫描电镜照片显示,CeO2,Y2O3缓冲层的表面均匀致密,无裂纹生成,但两种薄膜中,都有呈三角形的胞状突起。更多还原

【Abstract】 The CeO₂ and Y₂O₃ buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering.Ar/H₂ mixed atmosphere,which is used as pre-depositing gas,can effectively inhibit the formation of NiO.In addition,the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films.The growth conditions of CeO₂ and Y₂O₃ were comparatively studied,and it is found that the windows of substrate temperatures and pressures for CeO₂ films are wider than that for Y₂O₃ films.In result,the pure（100） orientation CeO₂ buffer layer is obtained,and the full width half maximum（FWHM） of the Ф-scan of CeO₂（111） is 8.5°.However,there exist two orientations in the Y₂O₃ a-b plane,one is Y₂O₃（110）‖Ni（100）,the other is Y₂O₃（100）‖Ni（100）.In addition,the AES analysis!shows that the interface of CeO₂/Ni is better than that of Y₂O₃/Ni.The SEM observations indicate that the surfaces of two buffer layers are quite dense and crack-free,though some triangular hillocks are scattered on both surfaces.更多还原