【摘要】 采用γ射线辐照含纳米硅的氧化硅薄膜,测量了其辐照前后的光致发光谱.用Gauss函数对各发光谱进行了拟合,结果表明各光谱都是三峰结构.γ辐照后,除原有的2个位于800 nm(1.55 eV)和710 nm(1.75 eV)的发光峰峰位几乎未变之外,位于640 nm(1.94 eV)的肩峰被一个很强的580 nm(2.14 eV)的新峰遮盖.根据实验现象与光谱分析,可以认为含纳米硅的氧化硅薄膜的光发射主要来自电子-空穴对在SiO2层发光中心上的辐射复合.更多还原

【Abstract】 Nano-Si-SiO₂ thin films are irradiated by γ-ray after annealing at different temperature.The PL spectrums of all samples are measured,and are analysed by using Gaussian function.The results show that the PL spectrums of all samples can be decompounded into three Gaussian luminescence bands.After γ-ray irradiation,the positions of peaks located at about 710 nm（1.75 eV） and 800 nm（1.55 eV） are not shifted,but the peak of 640 nm（1.94 eV） is covered by a strong new 580 nm（2.14 eV） peak.These experimental and analytical results can be explained by the model that photoemission occurs through the luminescence centers in the nano-Si-SiO₂ thin films.更多还原