【摘要】 以非制冷红外焦平面阵列和热剪切应力传感器为代表,分析了这两种典型的薄膜悬浮结构和带空腔结构的MEMS器件在进行二氧化硅牺牲层的腐蚀和最终结构释放过程中的各种问题。根据二氧化硅的腐蚀机理,指导了对腐蚀孔(槽)的设计,通过测量不同条件下的腐蚀速度,得出升温、超声、适时更换腐蚀液是加快腐蚀速度的方法,基于粘连现象中拉起长度的概念,提出基于硅衬底下突点制作及释放牺牲层的方法,并获得了成功释放。更多还原

【Abstract】 According to the uncooled infrared focal plane array and thermal shear stress sensor,some questions in the wet etching and releasing of such MEMS devices were analyzed.Analysis of etching mechanism offered an effective reference for the etching hole or etching channel design;Etching rates of silicon dioxide sacrificial layers under different conditions were obtained,from which increasing temperature,ultrasonic vibration,and replacing etchant are the methods of increasing etching rate;Based on conception of detachment length in adhering phenomena, fabrication and releasing sacrificial layer method using bumps based on silicon substrate is presented,and the sacrificial layer is successfully released.更多还原