【摘要】 利用Prolith 9.0软件计算了浸没式ArF光刻中杂散光、光线偏振态和几何像差对目标线宽为65 nm的L形图形成像质量和光刻性能的影响,研究了杂散光、光线偏振态和几何像差对L形图形成像质量和光刻性能的影响规律。结果表明,杂散光使得L形图形图像对比度降低、线宽减小和图形位置误差增大;像散、慧差和球差可导致成像质量降低、线宽和图形位置误差增大;通过调整光线偏振态,可以提高成像质量、改善光刻性能、抑制L形图形对杂散光和像差的敏感度。更多还原

【Abstract】 The impacts of optical factors including flare,polarized light and geometrical aberration on 65 nm L pattern in ArF immersion lithography were calculated using the commercial software Prolith 9.0 and the impact rules of these optical factors on imaging quality and lithography performances of L pattern were studied.The results show that the flare leads to reduction of image contrast,shrinkage of line-width and increment of pattern place error.The astigmatism,coma and spherical aberration result in decrement of the image contrast,increment of line-width and pattern place error.An appropriate polarized light can be applied to improve the image contrast and it also can restrain sensitivities of L pattern to flare and aberration.更多还原