【摘要】 基于表面势解析模型,通过将多子带等效为单子带,建立了耗尽/反型状态下小尺寸MOSFET直接隧穿栅电流解析模型.模拟结果与自洽解及实验结果均符合较好,表明此模型不仅可用于SiO2、也可用于高介电常数(k)材料作为栅介质以及叠层栅介质结构MOSFET栅极漏电特性的模拟分析,计算时间较自洽解方法大大缩短,适用于MOS器件电路模拟.更多还原

【Abstract】 An analytic model of direct tunneling current of small-scale MOSFETs in depletion and inversion is developed based on analytic surface-potential model and replacing the multi-subband with a single-subband. The simulated results are in good agreement with the results of self-consistent solution and experimental data, but take much shorter computing time than the self-consistent solution method. This indicates that the model can be used for analysis of gate-leakage properties of MOS devices with not only SiO₂ but also high-k materials as gate dielectric and high-k gate dielectric stack structures, and circuit simulation of MOS devices.更多还原