【摘要】 欧拉电压是SiGe HBT一项重要的直流参数,受到基区结构(如Ge组分)的影响。研究发现,高温过程会导致硼的外扩散,从而影响异质结的位置,使欧拉电压受到影响。实验发现,通过优化基区结构,加厚CB结处i-SiGe厚度,可获得VA=520 V,βVA=164,320 V的SiGe HBT。更多还原

【Abstract】 As one of the important DC parameters of SiGe HBTs,Early voltage is affected by base structure,such as Ge content at the interface of collector-base junction.Effects of boron out-diffusion on Early voltage are investigated.When high temperature processes are involved in the fabrication of SiGe HBTs,boron atoms diffuse towards N-collector layer and emitter layer from SIMS analysis and the Ge content at the interface of collector-base junction decreases,so that the Early voltage decreases.By increasing the depth of i-SiGe at the collector and base interface,devices with V_A=520 V and βV_A=164,320 V are fabricated.更多还原