【摘要】 介绍了一个基于0.35μm CMOS 6层金属工艺,采用片外阻抗匹配网络的两级AB类功率预放大器。电路在3.3 V电源电压下工作,静态电流为18 mA。测得功率预放大器的功率增益为10 dB,最大有6 dBm输出功率到50Ω负载。采用片上线性化技术,功率预放大器在1.9 GHz频率获得了很好的线性度:输出三阶截点OIP3=9.4 dBm,输出1 dB压缩点OP1 dB=-0.6dBm。更多还原

【Abstract】 A two-stage Class-AB pre-power amplifier using off-chip impedance matching is presented,which was implemented in a 0.35 μm CMOS 1P6M process.The circuit consumes 18 mA current under 3.3 V supply.A power gain of 10 dB was measured,and its maximum output power to 50 Ω load is up to 6 dBm.Using on-chip linearization technology,the pre-power amplifier has a very good linearity at 1.9 GHz(OIP3=9.4 dBm and OP1 dB=-0.6 dBm).更多还原