【摘要】 介绍了一种CMOS基准电压源,该电路由NMOS管阈值电压的温度系数及NMOS管迁移率温度系数形成温度补偿,产生低温度系数的基准电压。与传统的带隙基准比较而言,不需要三极管;另外,通过结构的改进,变成正负温度系数电流叠加型的基准电压源,可以按需要任意调节输出基准电压的值,而且可以同时提供多个基准电压。电流叠加型基准电压源电路已经在3μmCMOS工艺线上实现,基准电压源输出中心值在2.2 V左右,温度系数为80 ppm/℃。更多还原

【Abstract】 A CMOS voltage reference without bipolar junction transistor is presented,which is based on the temperature coefficient of threshold voltage and mobility.With an improvement on the structure,a CMOS voltage reference with current superposition is formed to obtain different values of voltage reference.Implemented in a 3 μm CMOS process,the proposed reference can provide a reference voltage of approximately 2.2 V and a temperature coefficient of 80 ppm/℃,and the voltage changes less than 25 mV from 0 to 100 ℃.更多还原