【摘要】 研究了Cs(62P)多重态分别与N2、He的光学碰撞中的精细结构分支比,定义分支比为|(D1)/|(D2),|(D1)、|(D2)分别为Cs的D1和D2线的荧光强度。单模半导体激光器激发Cs原子到6P3/2态,通过与N2、He的激发转移、碰撞传能研究了62p原子的精细结构混合,得到了6P→6P的转移截面如下:Cs-He的转移截面为σ=2.25×10-19cm2,Cs-N的转移截面为σ=1.808×10-18cm2。并对结果进行了讨论。更多还原

【Abstract】 Ratios for branching into the fine-structure levels of the Cs 6P multiplet, as a consequence of an optical collision with N2 and He atoms are reported. The branching ratios are defined as I（D₁）/I（D₂） ,where I（D₁） and I（D₂） are measured intensities of the atomic CsD₁ and D₂ lines. Cs atoms were excited to the 6P 3/2 level by using a single-mode laser diode. Thefine-structure mixing in 6²p atoms is studied through excitation transfer and collisional excitation transfer between Cs and N₂ , He. We obtained the value of Cs-He cross section to beσ 21= 2.25×10-¹9 cm²,Cs-N₂ cross section to be σ₂1 =1.808×10 -18 cm². The results are discussed.更多还原