【摘要】 本文对结型场效应管JFET输入运算放大器的增强辐射损伤方法进行了研究。结果表明,采用循环辐照—退火的方法可以使JFET输入运算放大器的辐射损伤增强,并且通过调整辐照剂量率、退火温度及时间等参数,可以评测出器件的低剂量率辐射损伤情况。文章还对这种辐射损伤方法的机理进行了分析。更多还原

【Abstract】 A method of enhancing radiation damage for JFET-input op-amps has been studied in this paper. The results show that a circulative irradiation-annealing method can make the radiation damage of JFET-input op-amps enhanced , and radiation damage of the devices at low dose rate can be evaluated through adjusting parameters such as radiating dose rate, annealing temperature and time, etc. The possible mechanism of this method is discussed.更多还原