【摘要】 采用XeCl脉冲准分子激光器,保持激光脉冲比为1:2,分时烧蚀Er靶和高阻抗单晶Si靶。改变激光能量,在真空中沉积了掺Er非晶Si薄膜。在氮气保护下,分别在950℃,1010℃和1100℃温度下进行30min热退火处理,得到掺Er纳米晶Si薄膜。扫描电子显微镜的结果表明,高的退火温度或高的激光能量均会导致迷津结构的形成。更多还原

【Abstract】 In the experimental situation,the Er and Si targets are ablated alternately with the pulse-number-ratio of 1: 2 by a XeCl excimer laser.The Er-doped amorphous Si films are prepared in vacuum by different laser energy.The as-formed films,being annealed for 30 minutes at the constant temperature of 950℃,1010℃or 1100℃in N2 gas,are converted into Er-doped nanocrystalline Si films.The scanning images of electron microscopy show that high annealing temperature or high laser energy can induce the nanocrystalline Si film with mazes.更多还原