【摘要】 研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。模拟结果和流水实验结果都表明:多块场极板是提高LEDM O S击穿电压的一种有效方法,而且场极板对导通电阻的影响很小。研究结果还表明:由于金属铝引线下面的氧化层很厚,所以铝引线几乎不会影响到LEDM O S的击穿特性。更多还原

【Abstract】 In this paper,the surface electrical field distributions along the drift regions of the conventional LEDMOS,TPFP LEDMOS and M-TPFP LEDMOS were presented by MEDICI respectively.The electrical field peaks and the specific on-resistance have been discussed in details.In terms of the analysis and discussion results on the changes of the electrical field peaks of the three kinds of the high voltage LEDMOS,a method to improve the breakdown capability of the high voltage BS LEDMOS was given.The analysis results also proved that the metal wires crossed the LEDMOS was given.The analysis results also proved that the metal wires crossed the LEDMOS wouldn’t degrade the breakdown capability of the high voltage LEDMOS for the thick oxide layer.The experimental results on the specific on-resistance also show that the onresistance of the TPFP and M-TPFP LEDMOS changed little compared with that of the conventional LEDMOS.更多还原