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新型空穴传输材料N,N′-二(α-萘基)-N,N′-二苯基-4,4′-联萘胺的合成与光电性质
Novel hole-transporting materials: synthesis and photoelectric properties of N,N′-di(α-naphthyl)-N,N′-diphenyl-4,4′-naphthidine
【摘要】 以4,4′-联萘胺为母体,以最常用的空穴传输材料N,N′-二(α-萘基)-N,N′-二苯基-4,4′-联苯胺(α-NPD)为样板,合成了新型空穴传输材料N,N′-二(α-萘基)-N,N′-二苯基-4,4′-联萘胺(α-NPN)。通过核磁共振氢谱和元素分析进行了结构表征。差热分析测定其玻璃化温度(Tg)达到128℃。相对于α-NPD,α-NPN的吸收光谱和光致发光光谱都发生了红移。循环伏安法测定其氧化电势为1.20V,比α-NPD的1.02V稍高。该化合物可发明亮的蓝色荧光(461 nm),积分球测定其薄膜荧光量子效率为8.5%,比α-NPD的5.5%高。初步确定α-NPN可作为有机电致发光空穴传输材料。
【Abstract】 With 4,4′-naphthidine as a parent compound and N,N′-di(α-naphthyl)-N,N′-diphenyl-4,4′-benzidine(α-NPD) as a model,N,N′-d_i(α-naphthyl)-N,N′-diphenyl-4,4′-naphthidine(α-NPN) was synthesized and characterized by ~1HNMR and EA.Determined by DSC,α-NPN has a higher glass transition temperature(T_g=128℃) than that of α-NPD.The absorption and thin film photoluminescence spectra of α-NPN red-shifts relative to those of α-NPD.Its oxidation potential,determined by cyclic voltammetry in solution,is 1.20V,higher than 1.02V of α-NPD.Additionally,α-NPN thin film emits bright blue fluorescence(461 nm) with a quantum efficiency of 8.5%,higher than that of α-NPD(5.5%).The structure-property analyses prove that α-NPN potentially serve as a good hole-transport material.
【Key words】 hole-transporting materials; N,N′-di(α-naphthyl)-N,N′-diphenyl-4; 4′-naphthidine glass transition temperature; quantum efficiency; oxidation potential;
- 【文献出处】 功能材料与器件学报 ,Journal of Functional Materials and Devices , 编辑部邮箱 ,2006年05期
- 【分类号】O625.6
- 【被引频次】8
- 【下载频次】285