【摘要】 介绍了微电子工业的发展趋势和Si O2作为CMOS栅介质减薄所带来的问题,从而引出对高K材料的需求,简单介绍了作为栅极介质的各种高介电常数材料的性能的比较及制备高K薄膜的主要方法,总结了一些高K材料的研究现状,论述了目前有待进一步解决的问题,并展望了高K材料的发展趋势。更多还原

【Abstract】 This paper provides a brief review of development of the micro-electronic industry;describes how the properties of MOSFETs are affected when the SiO₂ layer thickness decreases,which leads to the requirement of high-K gate dielectric materials;analyses some sorts of materials for high K gate and the methods for preparing high K film ;summarizes recent progress in high K gate dielectrics and points out some problems to be solved by further research.更多还原