【摘要】 高次模薄膜体声波谐振器(HBAR)具有简单的半导体工艺特性和良好的高频特性能,在分析HBAR结构和工作模式的基础上,用MBVD模型在ADS上仿真设计了2GHz谐振频率间隔20MHz的HBAR,实验采用掩模合射频溅射制备了这种HBAR,实测谐振频率间隔22MHz,与理论接近,显示了较好的频率特性,实验同时制备了的高C轴取向的AlN薄膜.更多还原

【Abstract】 thin films acoustic bulk wave resonator work at high mode, which is named as HBAR, has a simple semiconductor process and good high frequency properties. HBAR work mode and its structure are analyzed. Based on MBVD model, a working on 2GHz HBAR is designed with ADS, whose resonate frequency gap is 20MHz. This structure HBAR is fabricated on the silicon by mask. The AlN thin films with high c-axis orientation are deposited by RF reactive magnetron sputtering. This fabricated device is measured by network analyzer. The resonate frequency gap is 22MHz and closed to designed device.更多还原