【摘要】 采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5·4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21·6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器.更多还原

【Abstract】 An InGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process.From the stability factor K,the device shows unconditional stability in a wide frequency range due to the RC network.The power characteristics of the device as measured by a load-pull system show that the large-signal performance of the power transistor is affected slightly by the RC network.P_ sat is 30dBm at 5.4GHz,and P_ 1dB is larger than 21.6dBm at 11GHz.The stability of the device due to RC network is proved by a power combination circuit.This makes the power transistor very suitable for applications in microwave high power HBT amplifiers.更多还原