【摘要】 对基于0·2μmGaAsPHEMT工艺设计的10Gb/s低噪声前置放大器进行了理论分析与仿真,并且进行了流片测量验证.电路采用共源结构,噪声小,灵敏度高.测量结果表明该前置放大器在3·3V单电源、50Ω输出负载的条件下,跨阻为57·8dB·Ω,带宽可达到11GHz,芯片面积为0·5mm×0·4mm.测试结果与理论分析和仿真结果比较符合,此前置放大器可以工作在10Gb/s速率.更多还原

【Abstract】 A 10Gb/s low noise preamplifier based on a 0.2μm GaAs PHEMT is theoretically analyzed,simulated,and taped out for verification.A common-source topology is adopted to reduce the noise and enhance the sensitivity.The test results show that under a single supply voltage of 3.3V,the preamplifier has a trans-impedance of 57.8dB·Ω with a bandwidth of over 10GHz.The chip’s area is 0.5mm×0.4mm.According to the test results the preamplifier can operate well at 10Gb/s.更多还原