【摘要】 分别在n-Si(100)和SiO2衬底上用离子束溅射法淀积SiGe薄膜.用俄歇电子谱测定薄膜Ge含量为15%~16%.对样品进行常规炉退火以考察退火温度和时间对薄膜结晶度的影响.采用X射线衍射确定薄膜物相.发现在同样退火条件下,SiGe在n-Si衬底上比SiO2上有更高的结晶度.通过曲线拟合,得到平均晶粒尺寸与退火温度和时间的依赖关系分别是自然指数和近线性的抛物线函数.推断出溅射SiGe薄膜的热退火结晶可能是晶粒生长控制过程.更多还原

【Abstract】 Polycrystalline Si 1-xGe_x thin film is deposited on n-Si（100） and SiO₂ substrates respectively by ion beam sputtering.The Ge fraction in the Si 1-xGe_x layer is determined to be 0.15～0.16 by Auger electron spectroscopy.The samples are annealed in a conventional furnace at different temperatures for different durations to investigate temperature and time effects on crystallinity.Phase identification is performed by X-ray diffractometry.It is found that the Si 1-xGe_x film has a higher crystallinity on n-Si than on SiO₂ under identical annealing conditions.The dependences of the average grain size on annealing temperature and time are exponential and parabolic functions, respectively,as determined by curve fitting.Thus the crystallization process of ion beam sputtered Si 1-xGe_x film may be controlled by grain growth.更多还原