节点文献
基于GaAs工艺的36GHz压控振荡器
A 36GHz Voltage Control Oscillator in GaAs PHEMT Technology
【摘要】 利用法国OMMIC公司的0·2μm GaAs PHEMT工艺,设计实现了一个36GHz压控振荡器电路.该电路采用完全差分的调谐振荡器结构,通过引进容性源极耦合差动电流放大器和调谐负载电路,提高了电路的性能.测试表明:该压控振荡器中心频率为36GHz,调谐范围约为800MHz,在偏离中心频率10MHz处的单边带相位噪声为-98·83dBc/Hz.芯片面积为0·5mm×1mm,采用-5V单电源供电,核心单元功耗约为200mW.
【Abstract】 A 36GHz voltage-controlled oscillator is designed and realized in OMMIC’s 0.2μm GaAs PHEMT technology.A fully differential structure is applied in the tunable oscillator.In order to improve the circuit performance,a capacitive-source-coupled current amplifier is used as the active part,and a single-tuned tank as a load.The measurement results show that the center frequency of the VCO is 36GHz and the tuning-range is 800MHz.The phase noise is -98.83dBc/Hz at a 10MHz offset.The chip area is 0.5mm×1mm,and the DC power consumption of the core is 200mW under a single -5V power supply.
【Key words】 VCO; CPW; capacitive-source-coupled current amplifier; GaAs;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2006年03期
- 【分类号】TN752
- 【被引频次】2
- 【下载频次】191