【摘要】 介绍了基于0.35μm工艺设计的单片CMOS图像传感器芯片.该芯片采用有源像素结构,像素单元填充因数可达到43%,高于通常APS结构像素单元30%的指标.此外还设计了一种数字动态双采样技术,相对于传统的双采样技术(固定模式噪声约为0.5%),数字动态双采样技术具有更简洁的电路结构和更好抑制FPN噪声的效果.传感器芯片通过MPW计划采用Chartered0.35μm数模混合工艺实现.实验结果表明芯片工作良好,图像固定模式噪声约为0.17%.更多还原

【Abstract】 A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced.The architecture of an active pixel sensor is used in the chip.The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%.Moreover,compared with the conventional method whose fixed pattern noise (FPN) is around 0.5%,a dynamic digital double sampling technique is developed,which possesses simpler circuit architecture and a better FPN suppression outcome.The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW.The experimental results show that the chip operates well,with an FPN of about 0.17%.更多还原