【摘要】 采用不同硅化工艺制备了NiSi薄膜并用剖面透射电镜(XTEM)对样品的NiSi/Si界面进行了研究.在未掺杂和掺杂(包括As和B)的硅衬底上通过物理溅射淀积Ni薄膜,经快速热处理过程(RTP)完成硅化反应.X射线衍射和喇曼散射谱分析表明在各种样品中都形成了NiSi.还研究了硅衬底掺杂和退火过程对NiSi/Si界面的影响.研究表明使用一步RTP形成NiSi的硅化工艺,在未掺杂和掺As的硅衬底上,NiSi/Si界面较粗糙;而使用两步RTP形成NiSi所对应的NiSi/Si界面要比一步RTP的平坦得多.高分辨率XTEM分析表明,在所有样品中都形成了沿衬底硅〈111〉方向的轴延-NiSi薄膜中的一些特定晶面与衬底硅中的(111)面对准生长.同时讨论了轴延中的晶面失配问题.更多还原

【Abstract】 Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy (XTEM).With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped (As and B) Si(001) substrates by rapid thermal processing (RTP).The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectroscopy.The influence of the substrate doping and annealing process (one-step RTP and two-step RTP) on the NiSi/Si interface is investigated.The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface.High resolution XTEM study shows that axiotaxy along the Si<111> direction forms in all samples,in which specific NiSi planes align with Si(111) planes in the substrate.Axiotaxy with spacing mismatch is also discussed.更多还原