【摘要】 对量子阱红外探测器研制中通常采用的铟膜制备和铟柱生长技术进行了研究。从铟源的选择及蒸发的方法、距离、真空度的控制等方面做了大量实验,优化出了最佳工艺条件。铟源的纯度99.99%,电子束蒸发厚金属膜,旋转行星夹具,蒸发距离39cm,1.33×10-Pa真空下启动蒸5发程序和关闭高阀,辅以适当的剥离方法,最终在光敏芯片和读出电路上分别制备出符合设计要求的20μm×20μm×7μm(长×宽×高)铟柱。该工艺方法适用于任何厚金属膜的制备。更多还原

【Abstract】 A mass of experiments were carried out,and the selecting the source of indium,evaporation,distance and the control of vacuum degree were considered to optimize the process.The purity of indium source was 99,99%,the thick metal film was formed by electron beam evaporation using revolving planet holding devices,the evaporate distance was 39 cm,started up the evaporate program and closed the clique under a high vacuum degree about 1,33×10-5 Pa,and appropriate adjuvant lift,off was employed.Finally,congruent 20 μm×20 μm×7 μm(length×width×height)indium bump was fabricated on light sensitive chip and reading,circuit.This technique is available for any thick metal films.更多还原