【摘要】 研究了ULSI多层互连工艺中铜布线的CMP的机理;对影响抛光速率和抛光后表面状态的诸因素,如抛光条件、抛光方式和抛光耗材进行了分析;特别针对抛光液对铜布线CMP的影响,提出了目前存在的主要问题,并对未来的研究方向和研究内容进行了展望。更多还原

【Abstract】 Mechanism of copper interconnection CMP in ULSI was studied.The factors such as polish conditions,methods and consumptions which affected polish speed and surface state were analyzed.Specially aiming at the effect of polish slurry on copper chemical-mechanical polish,the primal problems existed at present were brought forward,and the prospect of research direction and content in future were presented.更多还原