【摘要】 平面型雪崩光电二极管(APD)在结弯曲处具有高的电场,导致在结边缘的提前击穿。运用FEMLAB软件对不同工艺流程制备的三种不同结构平面型InP/InGaAs APD的电场分布进行了二维有限元模拟,在表面电荷密度为5×1011cm-2时分析了吸收层厚度、保护环掺杂浓度、保护环和中央结纵向及横向间距等因素对边缘提前击穿特性的抑制程度。比较了这三种结构的InP/InGaAs APD在边缘提前击穿的抑制特性的优劣。通过理论研究对平面InP/InGaAs APD进行了优化。更多还原

【Abstract】 The edge pre-breakdown of planar-type avalanche photodiode（APD） is resulted from the intense electric field at the junction bend.A finite element two-dimensional（2-D） simulation is performed to study the electric field of planar-type APD with three different structures by the different process by using FEMLAB software fabricated.The absorption layer thickness,concentration of guard ring and guard ring spacing and deep in suppressing the edge pre-breakdown with surface charge of 5×10¹¹cm^-2 are analyzed.The performances of InGaAs/InP APDs with different structure are compared.The planar-type APD structure is optimized theoretically.更多还原