【摘要】 对采用真空气相沉积法在玻璃衬底上制备的稀土Nd掺杂的SnO2薄膜,进行结构、电学及光学特性的测试分析。实验表明:氧化、热处理条件为500℃、45 min时样品性能好。采用一步成膜工艺法制备的SnO2薄膜晶粒度较小,随掺Nd浓度的增大,从31.516 nm减小到25.927 nm;两步成膜工艺法制备的SnO2薄膜晶粒度随掺Nd浓度的增大,从45.692 nm增至66.256 nm。XRD分析,掺Nd(5 at%)薄膜沿[110][、101]晶向的衍射峰加强,薄膜呈多晶结构。掺Nd可使薄膜透光率下降,而薄膜的薄层电阻随热处理温度升高和掺Nd浓度的增大,呈先降后升趋势。更多还原

【Abstract】 Nd-doped SnO₂ nanofilms were grown on glass substrate by vacuum deposition in either one-step or in two steps.In the one-step growth,SnO₂（and Nd doipant） powder is deposited on a substrate,followed by in-situ annealing,whereas in the two-step growth,pure Sn（and Nd dopant） powder is first deposited and then the film is oxidized during annealing.The films were characterized with X-ray diffraction（XRD） and transmission spectroscopy.Strong XRD peaks of the film doped with 5 at% of Nd indicate that the film is a polycrystal and and are the two preferential growth orientations.We found that the growth process affects the variations in grain size.For example,the size of the SnO₂ grain grown in one step is much smaller and decreases from 31.516 to 25.927 nm as Nd concentration increases;whereas the size of the grain grown in two steps increases from 45.69 to 66.256 nm.Nd doping reduces the optical transmission.However,as the annealing temperature and Nd doping concentration increase,the sheet resistance of the film first drops to a minimum and then rises up.更多还原