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Effect of CeO2 on Electrical Properties of （Nb,Mn）-Doped TiO2 Varistor Ceramics

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【作者】 王茂华； 胡克鳌； 赵斌元； 张南法；

【Author】 Wang Maohua1, Hu Keao1, Zhao Binyuan1, Zhang Nanfa2 (1. State Key Laboratory of MMCs, Shanghai Jiaotong University, Shanghai 200030, China; 2. Changzhou Chuangjie Lightning Protection Co., Ltd, Changzhou 213016, China)

【机构】 State Key Laboratory of MMCs Shanghai Jiaotong University Shanghai 200030 China； State Key Laboratory of MMCs Shanghai Jiaotong University Shanghai 200030 China； Changzhou Chuangjie Lightning Protection Co. Ltd Changzhou 213016 China；

【Abstract】 The electrical properties of TiO2-based varistor ceramics with different amount of CeO2 were investigated by measuring the properties of V-I, permittivity, density and boundary defect barriers. It is found that an optimal composition doped with 0.7% CeO2 exhibits the highest nonlinear coefficient of 10.5, the highest breakdown voltage of 12.77 V·mm -1 , the ultrahigh permittivity of 82900（measured at 1 kHz）, and the highest density of 4.15 g·cm -3 , which is consistent with the highest and narrowest grain-boundary defect barriers. In order to illustrate the grain boundary barriers formation in TiO2-Nb2O5-MnCO3-CeO2 varistor, an grain-boundary defect barrier model was also introduced.

【关键词】 varistor； defect barrier model； TiO2； CeO2； electrical properties； rare earths；
【Key words】 varistor； defect barrier model； TiO2； CeO2； electrical properties； rare earths；
  • 【文献出处】 Journal of Rare Earths ,稀土学报(英文版) , 编辑部邮箱 ,2005年06期
  • 【分类号】TQ174.1
  • 【被引频次】1
  • 【下载频次】52
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