【摘要】 快中子辐照直拉硅 (CZ Si)经 4 0 0— 4 5 0℃热处理后 ,空位_双氧复合体 (VO2 )是其主要的缺陷 .在 30 0— 5 0 0℃热处理快中子辐照的CZ_Si后 ,IR光谱中有 919.6cm- 1 和 10 0 6cm- 1 两个吸收峰伴随VO2 (889cm- 1 )出现 ,这两个IR吸收峰是VO2 的一种亚稳态缺陷 (O V O)引起的 ,此缺陷态是由一个VO(A中心 )与次临近的一个间隙氧原子 (Oi)相互作用所形成的 .在 30 0℃延长退火时间或升高退火温度 ,都会使 (O V O)转变为稳态VO2 .辐照剂量在 10 1 9数量级 ,经 4 0 0— 4 5 0℃热处理所形成的缺陷主要为多空位型 ,而VO2 被抑制 .更多还原

【Abstract】 The vacancy-)dioxygen complex( V O 2) is one of the main defects formed in fast neutron irradiated CZ-)Si during annealing in the temperature range 400—500℃.In this defect,two oxygen atoms share a vacancy,each of which is bonded to two silicon neighbors.With the increase of the 889cm -1 ( V O 2),two infrared absorption bands at 919.6 and 1006cm -1 will arise in neutron irradiated CZ-)Si after annealed in the temperature range 300—500℃.IR vibrational bands at 919.6 and 1006cm -1 can be assigned to the metastable defect (O- V -O)that is composed of a V O( A center) and a neighboring interstitial oxygen(O i )atom.By prolonging the annealing time from 2h up to 10h or increasing the annealing temperature,the metastable defect(O- V -O)will be converted into V O 2.During annealing in the temperature range 400—500℃,the main defects formed in the high dose(10 19 ) neutron irradiated CZ-)Si is the multi-)vacancy type of defects and the formation of the V O 2 will be depressed.更多还原